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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF448/D NPN Silicon RF Power Transistor Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. * Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% * Intermodulation Distortion @ 250 W (PEP) -- IMD = - 30 dB (Max) * 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR MRF448 250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211-11, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Withstand Current -- 10 s Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC -- PD Tstg Value 50 100 4.0 16 20 290 1.67 - 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.6 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 -- -- -- -- -- -- -- -- Vdc Vdc Vdc Vdc (continued) NOTE: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions. (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF448 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 10 Vdc) hFE 10 30 -- -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob -- 350 450 pF FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) Collector Efficiency (VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA) Intermodulation Distortion (2) (VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz) Electrical Ruggedness (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, VSWR 3:1 at all Phase Angles) GPE IMD No Degradation in Output Power 12 -- -- -- 14 45 65 - 33 -- -- -- - 30 dB % (PEP) % (CW) dB NOTE: 2. To Mil-Std-1311 Version A, Test Method 2204, Two Tone, Reference each Tone. R1 + BIAS C3 C4 + - L3 L2 D.U.T. RF INPUT C1 L1 C2 R2 C5 L4 CR1 C8 L5 L6 + C9 + - - RF OUTPUT C10 50 Vdc C7 C6 C1, C2, C5, C7 -- 170- 780 pF, Arco 469 C3, C8, C9 -- 0.1 F, 100 V Erie C4 -- 500 F @ 6.0 V C6 -- 360 pF, 3 x 120 pF 3.0 kV in parallel C10 -- 10 F, 100 V R1 -- 10 , 10 Watt R2 -- 10 , 1.0 Watt CR1 -- 1N4997 or equivalent L1 -- 3 Turns, #16 Wire, 0.4 I.D., 0.3 Long L2 -- 0.8 H, Ohmite Z-235 or equivalent L3 -- 12 Turns, #16 Enameled Wire Closewound 0.25 I.D. L4 -- 4 Turns, 1/8 Copper Tubing, 0.6 I.D., 1.0 Long L5, L6 -- 2.0 H, Fair-Rite 2643021801 Ferrite bead each or equivalent Figure 1. 30 MHz Test Circuit Schematic MRF448 2 MOTOROLA RF DEVICE DATA 400 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) f = 30 MHz ICQ = 250 mA 400 f = 30, 30.001 MHz ICQ = 250 mA IMD = d3 IMD = - 30 dB 300 VCC = 50 V 40 V 300 200 200 - 35 dB 100 100 0 0 4 8 12 Pin, INPUT POWER (WATTS) 16 20 0 20 30 40 50 VCC, SUPPLY VOLTAGE (VOLTS) 60 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage 25 Pout , OUTPUT POWER (WATTS CW) 400 f = 30 MHz ICQ = 250 mA VCC = 50 V 20 G PE , POWER GAIN (dB) 350 15 300 TC = 50C 10 5 0 2 4 7 10 f, FREQUENCY (MHz) VCC = 50 V ICQ = 250 mA Pout = 250 W 250 200 100C 15 30 150 1 3 5 10 30 50 OUTPUT VSWR Figure 4. Power Gain versus Frequency Figure 5. RF SOAR (Class AB) Pout versus Output VSWR VCC = 30 V 200 15 V f T (MHz) 150 IMD, INTERMODULATION DISTORTION (dB) 250 - 25 VCC = 50 V f = 30, 30.001 MHz d3 - 30 - 35 d5 100 - 40 50 - 45 0 0 10 15 5 IC, COLLECTOR CURRENT (AMPS) 20 - 50 25 75 125 175 225 275 Pout, OUTPUT POWER (WATTS PEP) Figure 6. fT versus Collector Current Figure 7. IMD versus Pout MOTOROLA RF DEVICE DATA MRF448 3 20 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) CP 16 VCC = 50 V ICQ = 250 mA Pout = 250 W PEP 5000 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Zin Ohms 4.50 - j1.40 3.10 - j1.80 1.70 - j1.75 0.80 - j1.25 0.60 - j0.75 4000 12 RP 8 3000 2000 4 1000 0 1.5 2 4 7 10 f, FREQUENCY (MHz) 15 20 0 30 Figure 8. Output Resistance and Capacitance versus Frequency 30 15 7.0 4.0 f = 2.0 MHz Zo = 10 VCC = 50 V ICQ = 150 mA Pout = 250 W PEP f MHz 2.0 4.0 7.0 15 30 Figure 9. Series Equivalent Impedance MRF448 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211-11 ISSUE N MOTOROLA RF DEVICE DATA MRF448 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF448 6 *MRF448/D* MRF448/D MOTOROLA RF DEVICE DATA |
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